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0.1-micron-wide sandwich flux guide and free layer for spin dependent tunneling head sensors

Pohm, A. V. ; Anderson, J. M.

Journal of Applied Physics, May 15, 2002, Vol.91(10), p.8772(2) [Peer Reviewed Journal]

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1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300

Rumyantsev, S. L. ; Pascal, F. ; Shur, M. S. ; Hoffman, A. ; Dyakonova, N. ; Hu, X. ; Knap, W. ; Fareed, Q. ; Meziani, Y. ; Gaska, R. ; Bilenko, Yu.

Journal of Applied Physics, Oct 1, 2004, Vol.96(7), p.3845-3847 [Peer Reviewed Journal]

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1/f noise in metal-oxide-semiconductor transistors biased in weak inversion

Rhayem, J. ; Rigaud, D. ; Eya' A, A. ; Valenza, M. ; Hoffmann, A.

Journal of Applied Physics, April 1, 2001, Vol.89(7), p.4192(3) [Peer Reviewed Journal]

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1/f noise in semiconductor and metal nanocrystal solids.(Report)

Heng Liu ; Lhuillier, Emmanuel ; Guyot - Sionnest, Philippe

Journal of Applied Physics, April 21, 2014, Vol.115(15), p.154309-154309-7 [Peer Reviewed Journal]

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1/f noise investigations in small channel length amorphous silicon thin film transistors

Rhayem, J. ; Valenza, M. ; Rigaud, D. ; Szydlo, N. ; Lebrun, H.

Journal of Applied Physics, April 1, 1998, Vol.83(7), p.3660(8) [Peer Reviewed Journal]

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1/f noise produced by the random motion of the carriers crossing potential barriers in semiconductors

Yoshida, Hiromichi ; Yoshida, Masanori ; Shinoda, Tsutomu ; Saito, Ihoe

Journal of Applied Physics, Dec 1, 1994, Vol.76(11), p.7372(5) [Peer Reviewed Journal]

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1/f-type noise in a biased current perpendicular t the plane spin valve: A numerical study

Rebei, A. ; Berger, L. ; Chantrell, R. ; Covington, M.

Journal of Applied Physics, May 15, 2005, Vol.97(10), p.10E306-1-10E306-3 [Peer Reviewed Journal]

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1-octadecene monolayers on Si(111) hydrogen-terminated surfaces: Effect of substrate doping

Miramond, Corinne ; Vuillaume, Dominique

Journal of Applied Physics, August 1, 2004, Vol.96(3), p.1529-1536 [Peer Reviewed Journal]

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10 GHz bandstop microstrip filter using excitation of magnetostatic surface wave in a patterned [Ni.sub.78][Fe.sub.22] ferromagnetic film

Vroubel, Marina ; Yan Zhuang ; Rejaei, Behzad ; Burghartz, Joachim, N.

Journal of Applied Physics, April 15, 2006, Vol.99(8), p.08P506-1-08P506-3 [Peer Reviewed Journal]

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(100) Si/SiO2 interface states above midgap induced by Fowler-Nordheim tunneling electron injection

Inoue, Masao ; Shirafuji, Junji

Journal of Applied Physics, Dec 1, 1996, Vol.80(11), p.6315(7) [Peer Reviewed Journal]

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